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Self-aligned quadruple patterning process for Fin pitch below 20nm
Self-aligned quadruple patterning process for Fin pitch below 20nm
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机译:用于20nm以下鳍距的自对准四重图案化工艺
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摘要
A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.
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