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RESONANT TUNNELING DEVICES INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIALS AND METHODS OF DETECTING PHYSICAL PROPERTIES USING THE SAME
RESONANT TUNNELING DEVICES INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIALS AND METHODS OF DETECTING PHYSICAL PROPERTIES USING THE SAME
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机译：包含二维半导体材料的谐振隧道设备和使用相同方法检测物理性能的方法
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摘要
A resonant tunneling device includes a first two-dimensional semiconductor layer (131) including a first two-dimensional semiconductor material, like a transition metal dichalcogenide (TMDC or TMD), a first insulating, preferably also a two-dimensional, layer (140), on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer (132) on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material. The substrate (110) may comprise a back gate and the two-dimensional semiconductor layers are connected to first and second electrodes (171, 172), which may comprise graphene (150 in Fig. 13).
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