首页>
外国专利>
How to Enable High Temperature Processing Without Chamberped Lifting
How to Enable High Temperature Processing Without Chamberped Lifting
展开▼
机译：如何在不进行分块提升的情况下启用高温处理
展开▼
页面导航
摘要
著录项
相似文献
摘要
Implementations of the present disclosure provide methods for processing substrates in a processing chamber. In one implementation, the method comprises the steps of: (a) depositing a dielectric layer on a first substrate at a first chamber pressure using a first high-frequency RF power; (b) depositing a dielectric layer on the first substrate at a second chamber pressure, Depositing a dielectric layer on each of the N substrates, wherein N is an integer between 5 and 10, depositing a dielectric layer on the N substrates, wherein N is an integer between 5 and 10, Frequency RF power having a power density lower than the density of about 0.21 W / cm 2 to about 0.35 W / cm 2; (c) performing a chamber cleaning process without the presence of a substrate; And (d) repeating (a) through (c).
展开▼
机译：本公开的实施方式提供了用于在处理腔室中处理基板的方法。在一个实施方式中，该方法包括以下步骤：（a）使用第一高频RF功率在第一腔室压力下在第一基板上沉积介电层; （b）在第二腔室压力下在第一基板上沉积电介质层，在N个基板中的每个基板上沉积电介质层，其中N是5至10之间的整数，在N个基板上沉积电介质层，其中N是5至10之间的整数，频率RF功率的功率密度低于约0.21W / cm 2至约0.35W / cm 2的密度; （c）在没有衬底的情况下执行腔室清洁工艺; （d）重复（a）至（c）。
展开▼
