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ATOMIC EMISSION SPECTROMETER DEVICE BASED ON LASER INDUCED PLASMA, SEMICONDUCTOR MANUFACTURING FACILITY COMPRISING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING SAME
ATOMIC EMISSION SPECTROMETER DEVICE BASED ON LASER INDUCED PLASMA, SEMICONDUCTOR MANUFACTURING FACILITY COMPRISING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING SAME
According to a technological aspect of the present invention, provided are an atomic emission spectrometer device capable of being miniaturized with high detection strength, a semiconductor manufacturing facility including the device, and a semiconductor element manufacturing method using the device. The atomic emission spectrometer device comprises: at least one laser generator for generating a laser beam; a chamber in which a substance to be analyzed is contained, a laser is condensed using a mirror disposed therein, a plasma is generated by being irradiated with the condensed laser, and a plasma light from the plasma is emitted; a supply device for supplying the substance to be analyzed to the chamber; and a spectrometer for receiving and analyzing the plasma light.;COPYRIGHT KIPO 2019
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