首页> 外国专利> ATOMIC EMISSION SPECTROMETER BASED ON LASER-INDUCED PLASMA (LIP), SEMICONDUCTOR MANUFACTURING FACILITY INCLUDING THE ATOMIC EMISSION SPECTROMETER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ATOMIC EMISSION SPECTROMETER

ATOMIC EMISSION SPECTROMETER BASED ON LASER-INDUCED PLASMA (LIP), SEMICONDUCTOR MANUFACTURING FACILITY INCLUDING THE ATOMIC EMISSION SPECTROMETER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ATOMIC EMISSION SPECTROMETER

机译：基于激光诱导等离子体（LIP）的原子发射光谱仪，包括原子发射光谱仪的半导体制造设施以及使用原子发射光谱仪制造半导体器件的方法

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摘要

Provided are an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES. The AES includes: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.

机译：提供了一种原子发射光谱仪（AES），其可以以高检测强度缩小规模;包括AES的半导体制造设施;以及使用该AES制造半导体器件的方法。 AES包括：至少一个激光发生器，被配置为产生激光束;以及腔室，其包括设置在腔室内的椭圆形或球面镜，并且构造成反射透射到腔室内的激光束，从而使激光束会聚并照射在腔室内所包含的分析物上，以产生等离子体并发射等离子体光;连接到腔室以将分析物供应到腔室中的供应器;光谱仪被配置为接收和分析等离子体光，并获得关于等离子体光的数据以检测分析物中的元素。

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公开/公告号US2019094072A1

专利类型
公开/公告日2019-03-28

原文格式PDF
申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;
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申请/专利号US201815867981
发明设计人 SANG-GIL PARK;BYEONG-HWAN JEON;TAE-HEUNG AHN;
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申请日2018-01-11
分类号G01J3/18;G01J3/443;G01J3/36;
国家 US
入库时间 2022-08-21 12:05:18

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