首页>
外国专利>
RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES
RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES
展开▼
机译：电阻式随机存取存储器和制造技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
A self-aligned memory device includes a conductive bottom plug disposed within an insulating layer and having a coplanar top surface, a self-aligned planar bottom electrode disposed upon the coplanar top surface and having a thickness within a range of 50 Angstroms to 200 Angstroms, a planar switching material layer disposed upon the self-aligned planar bottom electrode, a planar active metal material layer disposed upon the planar switching material layer and a planar top electrode disposed above the planar active metal material layer, wherein the self-aligned planar bottom electrode, the planar switching material layer, the planar active metal material layer, and the planar top electrode form a pillar-like structure above the insulating layer.
展开▼
