首页>
外国专利>
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
展开▼
机译：具有选择性和非选择性刻蚀层的增强型GaN晶体管，可改善GaN间隔层厚度的均匀性
展开▼
页面导航
摘要
著录项
相似文献
摘要
An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. Any variation across the wafer from etching the etch stop layer and the underlying thin pGaN layer is much less than the variation resulting from etching a thick pGaN layer. The method of the present invention thus leaves a thin layer of GaN above the barrier layer with minimal variation across the wafer.
展开▼
