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ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
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机译：具有选择性和非选择性刻蚀层的增强型GaN晶体管，可改善GaN间隔层厚度的均匀性
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摘要
An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. The etch stop layer minimizes damage to the underlying barrier layer during gate etching steps, and improves GaN spacer thickness uniformity.
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