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RC-IGBT SEMICONDUCTOR DEVICE RC-IGBT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
RC-IGBT SEMICONDUCTOR DEVICE RC-IGBT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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机译：RC-IGBT半导体器件RC-IGBT及其制造方法
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摘要
Provided are a semiconductor device capable of constraining snapback, a reverse conducting-insulated gate bipolar transistor (RC-IGBT), and a manufacturing method of the semiconductor device. According to one embodiment of the present invention, the semiconductor device (100) comprises: a semiconductor substrate (1) having first and second main surfaces; an emitter electrode (46); a gate line (49); a collector electrode (43); and first and second unit cell areas (10, 20) extended in one direction on a plane parallel to the first main surface, respectively. The semiconductor substrate (1) of the first and second unit cell areas (10, 20) comprises: an N-type drift layer (39); an N-type hole barrier layer (38); a trench electrode (13); a P-type body layer (36); an insulation film (35); an N-type field stop layer (41); and a P+ type collector layer (42). Moreover, the second unit cell area (20) has an N type cathode layer (47) inserted into the collector layer (42) and extended in one direction.
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机译：提供了一种能够抑制回跳的半导体器件，反向导电绝缘栅双极晶体管（RC-IGBT）以及该半导体器件的制造方法。根据本发明的一个实施例，半导体器件（100）包括：具有第一和第二主表面的半导体衬底（1）;以及具有第一主表面和第二主表面的半导体衬底。发射极（46）;栅极线（49）;集电极（43）;第一和第二单位单元区域（10、20）分别在平行于第一主表面的平面上沿一个方向延伸。第一和第二单位单元区域（10、20）的半导体衬底（1）包括：N型漂移层（39）;和N型空穴阻挡层（38）;沟槽电极（13）; P型体层（36）;绝缘膜（35）; N型场截止层（41）; P +型集电极层（42）。此外，第二单位单元区域（20）具有插入到集电层（42）中并沿一个方向延伸的N型阴极层（47）。
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