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POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, POLISHING SOLUTION STOCK SOLUTION CONTAINING BODY, AND CHEMICAL MECHANICAL POLISHING METHOD
POLISHING SOLUTION, METHOD FOR PRODUCING POLISHING SOLUTION, POLISHING SOLUTION STOCK SOLUTION, POLISHING SOLUTION STOCK SOLUTION CONTAINING BODY, AND CHEMICAL MECHANICAL POLISHING METHOD
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机译：抛光液，生产抛光液的方法，抛光液库存溶液，包含身体的抛光液库存溶液以及化学机械抛光方法
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摘要
One objective of the present invention is to provide a polishing solution which is not likely to cause dishing and defects on a polished surface when applied to CMP of an object to be polished, said object containing a cobalt-containing layer. Another objective of the present invention is to provide a method for producing a polishing solution, a polishing solution stock solution, a polishing solution stock solution containing body, and a chemical mechanical polishing method. A polishing solution according to the present invention is a polishing solution for chemical mechanical polishing, which contains a colloidal silica having a degree of association of 1-3, an organic acid, an azole compound and hydrogen peroxide. If this polishing solution is in contact with a cobalt substrate for 24 hours, a reaction layer that contains cobalt atoms and has a thickness of 0.5-20 nm is formed on the cobalt substrate.
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