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MULTI-TIME PROGRAMMABLE (MTP) MEMORY CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME, AND METHODS FOR FABRICATING THE SAME
MULTI-TIME PROGRAMMABLE (MTP) MEMORY CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME, AND METHODS FOR FABRICATING THE SAME
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机译：多时间可编程（MTP）记忆细胞，包括该记忆体的集成电路以及制造该记忆体的方法
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摘要
Multi-time programmable (MTP) memory cells, integrated circuits including MTP memory cells, and methods for fabricating MTP memory cells are provided. In an embodiment, an MTP memory cell includes a semiconductor substrate including a CMOS device region and a DMOS device region. The MTP memory cell further includes a high voltage (HV) p-well in the CMOS device region and in the DMOS device region of the semiconductor substrate. An n-channel transistor is disposed over the HV p-well in the CMOS device region and includes a transistor gate. Also, the MTP memory cell includes an n-well overlying the HV p-well in the DMOS region of the semiconductor substrate. An n-channel capacitor is disposed over the n-well and includes a capacitor gate. The capacitor gate is coupled to the transistor gate.
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