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CMOS- WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS FOR DEFECT PROPAGATION CONTROL IN SILICON CMOS-COMPATIBLE SEMICONDUCTOR DEVICES
CMOS- WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS FOR DEFECT PROPAGATION CONTROL IN SILICON CMOS-COMPATIBLE SEMICONDUCTOR DEVICES
III-N semiconductor heterostructures are described that include elevated III-N semiconductor structures with inclined sidewall facets. In embodiments, lateral epitaxial overshoots favoring semi-polar slanted sidewall facets are used to bend horizontal propagation crystal defects from vertical propagation. In embodiments, any large merged III-N semiconductor structures with low defect density surfaces can be grown from trenches that expose the (100) surface of the silicon substrate. III-N devices such as III-N transistors may be additionally formed on the raised III-N semiconductor structures, and silicon-based transistors may be formed in other regions of the silicon substrate.
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