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Recess technique to embed flash memory in SOI technology
Recess technique to embed flash memory in SOI technology
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机译：嵌入式技术将闪存嵌入SOI技术
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摘要
An integrated circuit arranged on a silicon-on-insulator (SOI) substrate region is provided. The SOI substrate region is made up of a handle wafer region, an oxide layer arranged over the handle wafer region, and a silicon layer arranged over the oxide layer. A recess extends downward from an upper surface of the silicon layer and terminates in the handle wafer region, thereby defining a recessed handle wafer surface and sidewalls extending upwardly from the recessed handle wafer surface to meet the upper surface of the silicon layer. A first semiconductor device is disposed on the recessed handle wafer surface. A second semiconductor device is disposed on the upper surface of the silicon layer.
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