首页>
外国专利>
Wafer scale monolithic CMOS-integration of free- and non-free-standing Metal- and Metal alloy-based MEMS structures in a sealed cavity
Wafer scale monolithic CMOS-integration of free- and non-free-standing Metal- and Metal alloy-based MEMS structures in a sealed cavity
展开▼
机译：晶圆级单片CMOS集成在密封腔中基于自由和非自由的基于金属和金属合金的MEMS结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
An assembly of metallic MEMS structures directly fabricated on planarized CMOS substrates, containing the application-specific integrated circuit (ASIC), by direct deposition and subsequent microfabrication steps on the ASIC interconnect layers, with integrated capping for packaging, is provided. The MEMS structures comprise at least one MEMS device element, with or without moveable parts anchored on the CMOS ASIC wafer with electrical contact provided via the metallic interconnects of the ASIC. The MEMS structures can also be made of metallic alloys, conductive oxides and amorphous semiconductors. The integrated capping, which provides a sealed cavity, is accomplished through bonding pads defined in the post-processing of the CMOS substrate.
展开▼
