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A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO
A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO
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机译：TSV技术用于高纵横比3D铜互连的铜电镀微孔的方法
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摘要
the present invention Step 1: preparing an electroplating of copper methyl sulfonate system, Step 2: imparting wet the micro-via in the silicon through-electrode technique through electric plating pretreatment, step 3 : charged into the groove, and complete the post current spread, copper ions and additives steps are reasonably distributed in the microvia surface and in the interior of the silicon through-electrode technique, step 4: the silicon through-hole technology on the cathode (cathode) of the power source sikimyeo connection for the wafer, and fully immersed in the electroplating on the surface of the wafer electroplating, by having a step-by-step method for spinning or agitating the cathode current, but the electroplating, the current density of the plating condition is 0.01-10A / dm 2 , and the temperature in step is 15-30 , step 5: After the electroplating, including the step of completely clean the wafer with deionized water washing, spin-drying, or blow it, high-aspect-ratio relates to a method of micro-via-filling by copper electroplating having a through-silicon electrode described for 3D copper interconnection. To copper micro-via-filling by electroplating having a silicon through electrode technique for 3D copper interconnections in high aspect ratio provided in the present invention is high via-filling (via-filling) has a speed, a thin copper layer on the surface to have, voids (voids), and there is no risk of crack formation, the hoop 10 to the filling: may obtain a complete filling of the micro-vias having aspect ratio of 1 or more. ;
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