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Atomic layer deposition of metal oxides for memory applications

机译：用于存储应用的金属氧化物的原子层沉积

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摘要

Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.

机译：本发明的实施例总体上涉及非易失性存储器件以及用于制造这种存储器件的方法。用于形成诸如ReRAM单元之类的改进的存储器件的方法提供了优化的原子层沉积（ALD）工艺，用于形成包含至少一层硬质金属氧化物膜（例如，金属被完全氧化或基本上被氧化）的金属氧化物膜堆叠）和至少一个软金属氧化物膜（例如，金属的氧化程度比硬金属氧化物低）。软金属氧化物膜的电阻比硬金属氧化物膜的电阻低，因为软金属氧化物膜的氧化性或金属性比硬金属氧化物膜低。在一个示例中，硬金属氧化物膜通过利用臭氧作为氧化剂的ALD工艺形成，而软金属氧化物膜通过利用水蒸气作为氧化剂的另一ALD工艺形成。

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公开/公告号US9246096B2

专利类型
公开/公告日2016-01-26

原文格式PDF
申请/专利权人 INTERMOLECULAR INC.;KABUSHIKI KAISHA TOSHIBA;SANDISK 3D LLC;
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申请/专利号US201514624295
发明设计人 VIDYUT GOPAL;RANDALL J. HIGUCHI;IMRAN HASHIM;HIEU PHAM;TIM MINVIELLE;TAKESHI YAMAGUCHI;ZHENDONG HONG;
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申请日2015-02-17
分类号H01L29/768;H01L29/40;H01L21/8222;H01L21/20;H01L45/00;H01L27/24;
国家 US
入库时间 2022-08-21 14:29:18

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