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SYNTHESIS METHOD OF DIAMOND THIN FILM BY MICROWAVE PLASMA CVD METHOD
SYNTHESIS METHOD OF DIAMOND THIN FILM BY MICROWAVE PLASMA CVD METHOD
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机译：微波等离子体化学气相沉积法合成金刚石薄膜
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摘要
PROBLEM TO BE SOLVED: To effectively synthesize a conductive boron-doped diamond film on a large-sized substrate surface by a microwave plasma CVD method while quality is maintained.;SOLUTION: An apparatus including a cylindrical cavity resonator structure introducing a microwave having an oscillation frequency of 915 MHz into a synthesis chamber through a mode conversion device is used. A conductive B-doped diamond film is grown on a substrate surface through the steps of: placing the substrate on a substrate table with an edge on its periphery; adjusting a standing position of a plasma by placing a microwave reflector in a lower side of the substrate table in the synthesis chamber; mixing boron source gas and the reaction gas and supplying them in a middle position of a reactive gas supply tube for diamond production; and forming a single ellipsoidal plasma on the substrate surface under a condition of a synthesis chamber internal pressure 0.1-20.0 kPa, a substrate temperature 800°C-1200°C, and a microwave output 1-3 kW.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT
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