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Synthesis of thin and thick ultra-nanocrystalline diamond films by microwave plasma CVD system.

机译：微波等离子体CVD系统合成薄而厚的超纳米金刚石薄膜。

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摘要

Ultrananocrystalline diamond (UNCD) films offer a number of valuable properties like high Young's modulus, chemical inertness, and low coefficient of friction. These properties combined with small crystal size and film smoothness result in UNCD being very promising for many applications such as surface acoustic wave (SAW) devices, coatings for AFM tips, and films for Micro-Electro-Mechanical System (MEMS) devices.;The process to grow a variety of thin, thick, or conductive UNCD films using a Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) System are investigated. UNCD films are deposited over a wide pressure range (60--180 Torr) and temperature range (400--800°C). UNCD films were grown on Si (100), p-type boron doped, substrates with thicknesses ranging from 58 nm to greater than 70 mum. The highest growth rate of 1.12 mum/h was achieved at 180 Torr, with gas mixtures of HZ2Ar:CH4 = 4:100:2 sccm and 3 kW microwave power. Film surface roughness, as low as 10 nm, was obtained as measured by AFM Microscope. The conductivity of UNCD diamond films varied with nitrogen flow rate. At 20 sccm flow rate of nitrogen in the gas mixture, the conductivity of UNCD films was found to be 10.3 (O.cm)-1 .
机译：超纳米晶金刚石（UNCD）膜具有许多有价值的特性，例如高杨氏模量，化学惰性和低摩擦系数。这些特性与较小的晶体尺寸和薄膜光滑度相结合，使得UNCD在许多应用中非常有前途，例如表面声波（SAW）器件，AFM尖端的涂层以及微机电系统（MEMS）器件的薄膜。研究了使用微波等离子体辅助化学气相沉积（MPACVD）系统生长各种薄，厚或导电UNCD膜的方法。 UNCD薄膜的沉积压力范围很广（60--180托），温度范围也很广（400--800°C）。将UNCD膜生长在厚度为58 nm至大于70微米的p型掺硼Si（100）衬底上。 HZ2Ar：CH4 = 4：100：2 sccm和3 kW微波功率的混合气体在180 Torr时达到了1.12 mum / h的最高增长率。通过AFM显微镜测得的膜表面粗糙度低至10nm。 UNCD金刚石薄膜的电导率随氮气流速而变化。在混合气体中氮气流速为20 sccm时，发现UNCD膜的电导率为10.3（O.cm）-1。

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  • 作者

    Tran, Dzung Tri.;

  • 作者单位

    Michigan State University.;

  • 授予单位 Michigan State University.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2005
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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