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METHODS FOR STABILIZING AN INTERFACE POST ETCH TO MINIMIZE QUEUE TIME ISSUES BEFORE NEXT PROCESSING STEP
METHODS FOR STABILIZING AN INTERFACE POST ETCH TO MINIMIZE QUEUE TIME ISSUES BEFORE NEXT PROCESSING STEP
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机译:在下一处理步骤之前稳定接口后蚀刻以最小化排队时间问题的方法
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摘要
Methods for etching a dielectric barrier layer disposed on the substrate using a low temperature etching process along with a subsequent interface protection layer deposition process are provided. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes transferring a substrate having a dielectric barrier layer disposed thereon into an etching processing chamber, performing a treatment process on the dielectric barrier layer, remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the treated dielectric barrier layer disposed on the substrate, plasma annealing the dielectric barrier layer to remove the dielectric barrier layer from the substrate, and forming an interface protection layer after the dielectric barrier is removed from the substrate.
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