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n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS
n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS
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机译：用于热电应用的n型掺杂PbTe和PbSe合金
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摘要
The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm−3.
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机译：本发明证明，载流子的弱散射导致高迁移率，因此有助于对于热电材料实现具有高塞贝克系数的低电阻率。发明人通过在n型PbSe中在高温下获得高于1.3的热电品质因数zT来证明这种效果，这是因为与价带相比，载带在导带中的散射较弱。本发明进一步证明了载流子浓度为5.8×10 18 -1.4的n型PbTe 1-x I x 的良好的热电传输性质。 ×10 20 cm −3 。
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