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ALD Growth of PbTe and PbSe Superlattices for Thermoelectric Applications

机译：用于热电应用的PbTe和PbSe超晶格的ALD生长

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摘要

For this study PbTe and PbSe thin films have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(Ⅱ)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C_(11)H_(19)O_2)_2), (trimethylsilyl) telluride ((Me_3Si)_2Te) and bis-(triethyl silyl) selane ((Et_3Si)_2Se) as ALD precursors for lead, tellurium and selenium. Instead of classic layer-by-layer ALD growth the initial ALD nucleation of lead telluride was found to follow the Volmer-Weber island growth model. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe and PbSe thin films within the ALD process window range of 170 ℃ to 210 ℃ and discuss an early nano-scale PbTe/PbSe bilayer structure. Results of various physical characterizations techniques and analysis are reported.
机译：为了进行这项研究，通过使用铅（Ⅱ）双（2,2,6,6-四甲基-3,5-庚二酮）（Pb（A）的原子层沉积（ALD）在具有天然氧化物的硅基板上制备了PbTe和PbSe薄膜C_（11）H_（19）O_2）_2），（三甲基甲硅烷基）碲化物（（Me_3Si）_2Te）和双-（三乙基甲硅烷基）硒烷（（Et_3Si）_2Se）作为铅，碲和硒的ALD前驱物。代替经典的逐层ALD生长，发现碲化铅的初始ALD成核遵循了Volmer-Weber岛生长模型。我们发现成核过程对温度的强烈依赖性。在本文中，我们介绍了在170℃至210℃的ALD工艺窗口范围内生长PbTe和PbSe薄膜的最佳条件，并讨论了早期的纳米级PbTe / PbSe双层结构。报告了各种物理表征技术和分析的结果。

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  • 会议地点 San Francisco CA(US)
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    Arun Deepak Ramalingom Pillai; K. Zhang; K. Bollenbach; D. Nminibapiel; W. Cao; H. Baumgart; V. S. K. Chakravadhanula; Christian Kuebel; V. Kochergin;

  • 作者单位

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, USA,Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, Virginia 23606, USA;

    Karlsruhe Nano Micro Facility, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany,Helmholtz Institute Ulm (HIU) Electrochemical Energy Storage, Albert-Einstein-Allee 11, 89081 Ulm, Germany,Institute for Nanotechnology (INT), Karlsruhe Institute of Technology (KIT) - Campus Nord, Hermann-von-Helmholtz-Platz 1, Building 640, 76344 Eggenstein-Leopoldshafen, Germany;

    Karlsruhe Nano Micro Facility, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany,Institute for Nanotechnology (INT), Karlsruhe Institute of Technology (KIT) - Campus Nord, Hermann-von-Helmholtz-Platz 1, Building 640, 76344 Eggenstein-Leopoldshafen, Germany;

    MicroXact Inc., 295 Industrial Drive, Christiansburg, Virginia 24073, USA;

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