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N-TYPE DOPED PBTE AND PBSE ALLOYS FOR THERMOELECTRIC APPLICATIONS

机译：用于热电应用的N型掺杂PBTE和PBSE合金

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摘要

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe_1-xI_xwith carrier concentrations ranging from 5.8x10¹⁸-1.4x10²⁰ cm^-3.

机译：本发明证明，载流子的弱散射导致高迁移率，因此有助于对于热电材料实现具有高塞贝克系数的低电阻率。发明人通过在n型PbSe中在高温下获得高于1.3的热电品质因数 zT 来证明这种效果，这是因为与导带中的载流子相比，载流子在导带中的散射较弱。价带。本发明进一步证明了载流子浓度为5.8x10 ^{18 -1.4x10的n型PbTe _{1-x I _{x 的有利的热电传输性质。 ^{20 cm ^{-3 。}}}}} 展开▼

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公开/公告号WO2012151437A3

专利类型

公开/公告日2013-02-28

原文格式PDF

申请/专利权人 CALIFORNIA INSTITUTE OF TECHNOLOGY;SNYDER G. JEFFREY;LALONDE AARON;PEI YANZHONG;WANG HENG;
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申请/专利号WO2012US36383

发明设计人 SNYDER G. JEFFREY;LALONDE AARON;PEI YANZHONG;WANG HENG;
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申请日2012-05-03

分类号H01L35/12;H01L35/14;H01L35/34;

国家 WO

入库时间 2022-08-21 16:36:35

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3. n-Type doped PbTe and PbSe alloys for thermoelectric applications [P] . 美国专利： US8889028B2 . 2014-11-18

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4. n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS [P] . 美国专利： US2014027681A1 . 2014-01-30

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5. N-TYPE DOPED PBTE AND PBSE ALLOYS FOR THERMOELECTRIC APPLICATIONS [P] . 世界知识产权组织专利： WO2012151437A2 . 2012-11-08

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2. Thermoelectric properties of p-type (Bi_(0.15)Sb_(0.85))_2Te_3-PbTe graded thermoelectric materials with different barriers [J] . Guiying Xu Yanping Gao Changchun Ge Weiping Shen . 北京科技大学学报：英文版 . 2005,第4期

3. Thermoelectric Properties of N-typer Bi_2Te_3-PbTe Graded Thermoelectric Materials with Different Barriers [J] . Guiying Xu Changchun Ge Yanping Gao Weiping Shen Laboratory of Special Ceramics and Powder Metallurgy University of Science and Technology Beijing. Beijing 100083 China . 北京科技大学学报：英文版 . 2001,第4期

4. Properties of a reaction-bonded β-SiAlON ceramic doped with an FeMo alloy for application to molten aluminum environments [J] . Yan-jun Li ,Hai-liang Yu ,Hai-yun Jin . 矿物冶金与材料学报 . 2015,第005期

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6. 掺杂剂对p型PbTe热电性能的作用 [C] . 徐桂英 ,何欣 ,周张健 . 2003年全国粉末冶金学术会议 . 2003

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