首页> 外国专利> LOW-K DAMAGE FREE INTEGRATION SCHEME FOR COPPER INTERCONNECTS

LOW-K DAMAGE FREE INTEGRATION SCHEME FOR COPPER INTERCONNECTS

机译:铜互连的低K损伤免费集成方案

摘要

A method includes forming a sacrificial layer on a substrate. A hard mask layer is formed on the sacrificial layer. The hard mask layer and the sacrificial layer are etched to form a first plurality of openings in the hard mask layer and the sacrificial layer. A low-k dielectric layer is deposited in the first plurality of openings. The hard mask layer and the sacrificial layer are thereafter removed leaving behind a plurality of low-k dielectric pillar structures having second plurality of openings therebetween. The second plurality of openings are then filled with a copper-containing layer.
机译:一种方法包括在衬底上形成牺牲层。在牺牲层上形成硬掩模层。蚀刻硬掩模层和牺牲层以在硬掩模层和牺牲层中形成第一多个开口。低k介电层沉积在第一多个开口中。此后,去除硬掩模层和牺牲层,留下多个在其间具有第二多个开口的低k介电柱结构。然后,第二多个开口填充有含铜层。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号