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FABRICATION METHOD FOR DICING OF SEMICONDUCTOR WAFERS USING LASER CUTTING TECHNIQUES

机译:利用激光切割技术将半导体晶片切成小块的方法

摘要

A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units via wet etching by an acidic water solution; removing the protection layer by a non-acidic water solution and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) the materials for the protection layer must be corrosion-resistant to the acidic water solution for etching residues.
机译:一种利用激光切割技术对半导体晶片进行切割的制造方法,可以有效地防止半导体晶片单元上的器件受到激光切割后的后续步骤所引起的蚀刻底蚀的现象。通过激光对晶片进行切割,并使芯片单元彼此分离;通过酸性水溶液的湿法蚀刻去除模具单元上的设备上的激光切割残留物;用非酸性水溶液去除保护层并清洁模具单元上的设备。保护层材料的选择必须考虑以下因素:(1)保护层材料必须具有相对良好的附着和覆盖在晶片上的性能; (2)保护层的材料必须能耐酸性水溶液腐蚀,以蚀刻残留物。

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