SEMICONDUCTOR DEVICE WITH ONE-TIME PROGRAMMABLE MEMORY CELL INCLUDING ANTI-FUSE WITH MAETAL/POLYCIDE GATE

• 1. 包括反熔丝电路的半导体器件和向反熔丝电路写入地址的方法 [P] . 中国专利： CN101425341B . 2013.02.27
• 2. 包括反熔丝电路的半导体器件和向反熔丝电路写入地址的方法 [P] . 中国专利： CN102903390A . 2013-01-30
• 3. Semiconductor device with one-time programmable memory cell including anti-fuse with metal/polycide gate [P] . 美国专利： US9136271B2 . 2015-09-15

  机译： 具有一次性可编程存储单元的半导体器件，包括带有金属/多晶硅栅极的反熔丝

• 4. SEMICONDUCTOR DEVICE WITH ONE-TIME PROGRAMMABLE MEMORY CELL INCLUDING ANTI-FUSE WITH METAL/POLYCIDE GATE [P] . 美国专利： US2014233319A1 . 2014-08-21

  机译： 具有一次性可编程存储单元的半导体器件，其中包括与金属/聚氧乙烯门的反熔丝

• 5. Semiconductor device with one-time programmable memory cell including anti-fuse with metal/polycide gate [P] . 美国专利： US8743585B2 . 2014-06-03

  机译： 具有一次性可编程存储单元的半导体器件，包括带有金属/多晶硅栅极的反熔丝

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• 3. PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Surface passivation of perovskite film for efficient solar cells [J] . Yang(Michael) Yang . 半导体学报：英文版 . 2019,第4期
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