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Simulator of the prediction method and the ion irradiation damage of ion irradiation damage, and ion irradiation apparatus and ion irradiation method

机译:离子照射损伤的预测方法和离子照射损伤的模拟器,离子照射装置和离子照射方法

摘要

PROBLEM TO BE SOLVED: To provide a technique for feeding back damage distribution computation owing to ion radiation in a real pattern and process such as 100 nm scale to the process development of a device within realistic computation time such as several hours or several days.;SOLUTION: An ion radiation damage prediction method includes: a parameter computation step of computing the collision location and the incidence angle of an incident ion hitting a fabricated object by considering a transport path of the ion by adopting the Monte Carlo method; and a defect-distribution computation step of searching for data by referring information obtained at the parameter computation step and databases storing crystalline-defect-amount affected on the fabricated object prepared by molecular dynamics computation, ion reflection probabilities and ion penetration length distribution, obtaining the penetration depth and location of the incident ion based on the searched data and the incidence energy and angle of the incident ion, and obtaining a distribution of defects due to ion radiation generated in the fabricated object.;COPYRIGHT: (C)2011,JPO&INPIT
机译:要解决的问题:提供一种技术,用于在真实的计算时间内(例如几小时或几天),将离子辐射以真实的图案和工艺(例如100 nm规模)反馈给设备的工艺开发,以计算由于离子辐射而造成的损伤分布。解决方案:一种离子辐射损伤的预测方法,包括:参数计算步骤,采用蒙特卡罗方法,通过考虑离子的传输路径,计算入射离子撞击制造物体的碰撞位置和入射角;缺陷分布计算步骤,其通过参考在参数计算步骤获得的信息来搜索数据,以及存储通过分子动力学计算,离子反射概率和离子穿透长度分布而制备的,对制造对象产生影响的结晶缺陷量的数据库,从而获得基于搜索到的数据以及入射离子的入射能和入射角,确定入射离子的穿透深度和位置,并获得由于制造物体中产生的离子辐射引起的缺陷分布。;版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP5428450B2

    专利类型

  • 公开/公告日2014-02-26

    原文格式PDF

  • 申请/专利权人 ソニー株式会社;

    申请/专利号JP20090081098

  • 发明设计人 久保井 信行;小林 正治;

    申请日2009-03-30

  • 分类号H01L21/265;H01L21/3065;H01J37/305;H01J37/317;

  • 国家 JP

  • 入库时间 2022-08-21 16:11:43

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