首页>
外国专利>
GaN-BASED LIGHT EMITTING DIODE USING A GaN SUBSTRATE AS A GROWTH SUBSTRATE AND A LIGHT EMITTING DEVICE INCLUDING THE SAME
GaN-BASED LIGHT EMITTING DIODE USING A GaN SUBSTRATE AS A GROWTH SUBSTRATE AND A LIGHT EMITTING DEVICE INCLUDING THE SAME
展开▼
机译：使用GaN衬底作为生长衬底的GaN基发光二极管和包括该衬底的发光器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A GaN-based light emitting diode and a light emitting device including the same are provided to reduce optical interference between the light emitting diodes by arranging the light emitting diodes with parallelogram shapes. ;CONSTITUTION: A GaN-based first contact layer (119) is located on a GaN substrate (111). A GaN-based second contact layer (143) is located on the upper surface of the first contact layer. An active layer of a multiple quantum well structure is located between the first contact layer and the second contact layer. The GaN substrate has a parallelogram shape with an acute angle and an obtuse angle. A middle temperature buffer layer (113) is located between the GaN substrate and the first contact layer. The middle temperature buffer layer is grown on the GaN substrate at growth temperatures between 700 and 800 degrees Centigrade.;COPYRIGHT KIPO 2013
展开▼
