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EPITAXIAL WAFER MANUFACTURING APPARATUS, AN EPITAXIAL WAFER MANUFACTURING METHOD, AND AN EPITAXIAL WAFER CAPABLE OF PROTECTING THE SURFACE OF AN EPITAXIAL THIN FILM BY A PROTECTION LAYER
EPITAXIAL WAFER MANUFACTURING APPARATUS, AN EPITAXIAL WAFER MANUFACTURING METHOD, AND AN EPITAXIAL WAFER CAPABLE OF PROTECTING THE SURFACE OF AN EPITAXIAL THIN FILM BY A PROTECTION LAYER
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机译：表皮晶圆制造装置，表皮晶圆制造方法以及能够通过保护层保护表皮薄膜表面的表皮晶圆
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摘要
PURPOSE: An epitaxial wafer manufacturing apparatus, an epitaxial wafer manufacturing method, and an epitaxial wafer are provided to improve the efficiency of an epitaxial wafer process by preventing an epitaxial thin film from being contaminated due to external impurities.;CONSTITUTION: An epitaxial layer is deposited on a wafer in a first chamber(ST10). The wafer is transferred to a second chamber connected to the first chamber(ST20). A protection layer is formed on the wafer in the second chamber(ST30). The wafer is cooled in the second chamber(ST40).;COPYRIGHT KIPO 2013;[Reference numerals] (ST10) Step of depositing an epitaxial layer on a wafer in a first chamber; (ST20) Step of transferring the wafer to a second chamber; (ST30) Step of forming a protection layer on the wafer; (ST40) Step of cooling the wafer
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