首页> 外国专利> Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation

Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation

机译:使用不平衡磁场和等旋转控制生长中的硅晶体的熔体-固体界面形状

摘要

A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
机译:描述了一种用于生长硅晶体的系统,该系统有助于控制熔体-固体界面的形状。晶体生长系统包括加热的坩埚,该加热的坩埚包括半导体熔体,根据切克劳斯基工艺从该熔体中生长出单晶锭。铸锭生长在从熔体中拉出的晶种上。该方法包括向熔体施加不平衡的尖峰磁场,以及在将锭从熔体中拉出时沿相同方向旋转锭和坩埚。

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