EFFECTS OF MAGNETIC FIELDS ON MELT-CRYSTAL INTERFACE SHAPE AND MELT FLOW IN CZOCHRALSKI SILICON GROWTH

机译：磁场对直晶硅生长中熔体-晶体界面形状和熔体流动的影响

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The melt-crystal interface shape and the melt flow in the crucible play an important role in control of the crystal quality during Czochralski (CZ) growth. Application of magnetic field is an effective tool to control the melt flow and the interface shape in CZ silicon growth. Numerical study is performed to understand the effects of magnetic fields. Comparisons have been carried out for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are coupled and solved iteratively. The multi-block technique is applied to discretize the liquid and solid domain. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. Computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape.

机译：熔体-晶体界面形状和熔体在坩埚中的流动在切克劳斯基（CZ）生长过程中对控制晶体质量起着重要作用。施加磁场是控制CZ硅生长中熔体流动和界面形状的有效工具。进行数值研究以了解磁场的影响。已经对四种磁场布置进行了比较：无磁场，垂直磁场和两种尖尖形磁场。速度场，压力场，热场和电磁场被耦合并迭代求解。应用多块技术离散化液体和固体区域。熔融晶体界面的未知形状是通过迭代过程实现的。计算结果表明，磁场对对流的模式和强度以及界面形状都有明显的影响。

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《International Conference on Single Crystal Growth and Heat amp; Mass Transfer(ICSC-2003) vol.2; 20030922-26; Obninsk(RU)》|2003年|P.795-804|共10页
会议地点 Obninsk(RU)
作者
Liu L.; Kakimoto K.;
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Research Institute for Applied Mechanics, Kyushu University (6-1, Kasuga-Koen, Kasuga 816-8580, JAPAN);

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原文格式 PDF
正文语种 eng
中图分类晶体生长工艺;
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1. Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method [J] . Koichi Kakimoto, Lijun Liu Journal of Crystal Growth . 2009,第8期

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2. An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field [J] . Liu LJ, Nakano S, Kakimoto K Journal of Crystal Growth . 2005,第1a2期

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3. Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth [J] . Kakimoto K., Liu LJ. Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2003,第7a8期

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4. EFFECTS OF MAGNETIC FIELDS ON MELT-CRYSTAL INTERFACE SHAPE AND MELT FLOW IN CZOCHRALSKI SILICON GROWTH [C] . Liu L., Kakimoto K., Ministry of Russian Federation for Atomic Energy, International Conference on Single Crystal Growth and Heat Mass Transfer . 2003

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5. Liquid -encapsulated Czochralski growth of compound semiconductor crystals with steady and rotating magnetic fields. [D] . Yang, Mei. 2006

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EFFECTS OF MAGNETIC FIELDS ON MELT-CRYSTAL INTERFACE SHAPE AND MELT FLOW IN CZOCHRALSKI SILICON GROWTH

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