首页> 外国专利> PROCESS FOR PRODUCTION OF SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SINTERED (SILICON CARBIDE)-CARBON COMPLEX, CERAMIC-COATED SINTERED (SILICON CARBIDE)-CARBON COMPLEX, AND PROCESS FOR PRODUCTION OF SINTERED (SILICON CARBIDE)-CARBON COMPLEX

PROCESS FOR PRODUCTION OF SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SINTERED (SILICON CARBIDE)-CARBON COMPLEX, CERAMIC-COATED SINTERED (SILICON CARBIDE)-CARBON COMPLEX, AND PROCESS FOR PRODUCTION OF SINTERED (SILICON CARBIDE)-CARBON COMPLEX

机译：碳化硅涂层碳基材料，碳化硅涂层碳基材料，烧结（硅碳化物）-碳复合物，陶瓷涂层烧结（硅碳化物）-碳复合物（过程）的生产过程碳化硅）-碳复合物

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摘要

Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SP2 carbon structure with no dangling bond and edge plane sites of an Sp2 carbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400°C to 1600°C and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced.

机译：产生了一种涂覆有碳化硅的碳基材料，其中在诸如石墨的碳基材料的表面上致密且均匀地形成了碳化硅涂层。生产方法包括以下步骤：制备碳表面的表面具有无悬空键的SP2碳结构的基面位点和具有悬空键的Sp2碳结构的边缘面位的碳基材。使碳基材的表面在温度为1400℃至1600℃，压力为1至150Pa的气氛中与SiO气体反应以形成碳化硅，从而制得涂覆有碳化硅的碳基材。

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公开/公告号EP2474514A1

专利类型
公开/公告日2012-07-11

原文格式PDF
申请/专利权人 TOYO TANSO CO. LTD.;
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申请/专利号EP20100813705
发明设计人 NAKAMURA MASAHARU;MIYAMOTO YOSHINARI;TOJO TETSURO;
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申请日2010-09-01
分类号C04B35/52;C01B31/04;C01B31/36;C04B41/87;
国家 EP
入库时间 2022-08-21 17:12:15

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