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METHOD FOR PREPARING GALLIUM NITRIDE POWDER AND NITRIDE-BASED LIGHT-EMITTING ELEMENT USING GALLIUM NITRIDE POWDER PREPARED THEREBY
METHOD FOR PREPARING GALLIUM NITRIDE POWDER AND NITRIDE-BASED LIGHT-EMITTING ELEMENT USING GALLIUM NITRIDE POWDER PREPARED THEREBY
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机译：制备氮化镓粉的方法及使用其制备的氮化镓粉的基于氮化物的发光元件
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摘要
Disclosed is a method for preparing a GaN powder using a GaN etchant, which is produced when manufacturing a GaN-based light emitting element, and a nitride-based light-emitting element using a GaN powder prepared by using the method. The method for preparing the GaN powder, according to the present invention, comprises the following steps: (a) capturing the GaN etchant which is produced in the process of etching the GaN-based light emitting element; (b) cleansing the GaN etchant which is collected; (c) heating the GaN etchant which is cleansed and removing indium (In) components in the GaN etchant; and (d) pulverizing the GaN etchant from which the indium components are removed to render powder.
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