首页> 外国专利> MANUFACTURING METHOD OF GALLIUM NITRIDE POWDER, AND NITRIDE-BASED LIGHT-EMITTING ELEMENT USING GALLIUM NITRIDE POWDER MANUFACTURED BY THE SAME

MANUFACTURING METHOD OF GALLIUM NITRIDE POWDER, AND NITRIDE-BASED LIGHT-EMITTING ELEMENT USING GALLIUM NITRIDE POWDER MANUFACTURED BY THE SAME

机译:氮化镓粉的制造方法,以及使用相同制造的氮化镓粉的基于氮化物的发光元件

摘要

PROBLEM TO BE SOLVED: To provide a simple and easy manufacturing method of GaN powder, and a nitride-based light-emitting element using GaN powder manufactured by the method.;SOLUTION: The manufacturing method of GaN powder according to the invention comprises the steps of: collecting GaN etching by-products produced in an etching step of a GaN-based light-emitting element; rinsing the GaN etching by-products thus collected; heating the GaN etching by-products subjected to the rinse, thereby removing an indium (In) component that the GaN etching by-products contain; and pulverizing the GaN etching by-products with the indium component removed therefrom to make powder thereof.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种简单容易的GaN粉末的制造方法,以及使用该方法制造的使用GaN粉末的氮化物基发光元件。用于:收集在基于GaN的发光元件的蚀刻步骤中产生的GaN蚀刻副产物;冲洗由此收集的GaN蚀刻副产物;加热经过漂洗的GaN蚀刻副产物,从而除去GaN蚀刻副产物中包含的铟(In)成分;并研磨除去了铟成分的GaN蚀刻副产物以制成其粉末。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012182419A

    专利类型

  • 公开/公告日2012-09-20

    原文格式PDF

  • 申请/专利权人 SEMI-MATERIALS CO LTD;PARK KUN;

    申请/专利号JP20110137870

  • 发明设计人 JIN JOO;PARK KUN;

    申请日2011-06-21

  • 分类号H01L33/12;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:06

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