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L-BAND HIGH SPEED PULSED HIGH POWER AMPLIFIER USING LDMOS FET
L-BAND HIGH SPEED PULSED HIGH POWER AMPLIFIER USING LDMOS FET
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机译：使用LDMOS FET的L波段高速脉冲大功率放大器
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摘要
PURPOSE: An L-band high pulse high power amplifier using a LDMOS FET is provided to maintain a threshold voltage of a capacitor constantly using a zener diode connected between a switching unit and a capacitor unit. CONSTITUTION: A first switching unit(110) and a second switching unit(120) switch an input pulse according to the on/off of a switch. A BJT(Bipolar Junction Transistor) unit(130) maintains the input pulse applied from the first switching unit to a preset critical voltage. A capacitor unit(140) discharges the charged voltage inside. The capacitor unit reduces the fall time according to the input pulse of the low critical voltage received from the BJT unit and the second switching unit. A zener diode is connected to the second switching unit and the capacitor unit. The zener didoe unit maintains the voltage of the capacitor unit constantly.
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