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Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

机译:使用添加剂改善氮化硅陶瓷的微观结构和抗断裂性

摘要

A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.
机译:一种高强度,耐断裂的氮化硅陶瓷材料,包括约5至约75 wt%的β-氮化硅的细长增强晶粒,约20至约95 wt%的β-氮化硅细晶粒。细晶粒的长轴小于约1微米。约1至约15wt%的非晶态晶间相,其包含Si,N,O,稀土元素和二次致密化元素。细长的增强晶粒的长径比为2:1或更大,并且主轴的尺寸约为1微米或更大。细长的增强晶粒在陶瓷微结构内基本上各向同性地取向。氮化硅陶瓷的室温弯曲强度为1,000MPa以上,断裂韧性为9MPa-m (1/2)以上。氮化硅陶瓷在1200℃下表现出800MPa或更高的峰值强度。还包括制造氮化硅陶瓷材料的方法,所述氮化硅陶瓷材料表现出所述的高挠曲强度和耐断裂值。

著录项

  • 公开/公告号US7968484B2

    专利类型

  • 公开/公告日2011-06-28

    原文格式PDF

  • 申请/专利权人 PAUL F. BECHER;HUA-TAY LIN;

    申请/专利号US20070851540

  • 发明设计人 HUA-TAY LIN;PAUL F. BECHER;

    申请日2007-09-07

  • 分类号C04B35/587;

  • 国家 US

  • 入库时间 2022-08-21 18:09:19

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