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Device tunable thin film bulk acoustic resonator for performing phase modulation and amplitude modulation are incorporated
Device tunable thin film bulk acoustic resonator for performing phase modulation and amplitude modulation are incorporated
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机译：包含用于执行相位调制和幅度调制的器件可调薄膜体声谐振器
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摘要
PROBLEM TO BE SOLVED: To provide a device containing a controllable BAW resonator for amplitude modulating or phase modulating desired signals.;SOLUTION: The bulk acoustic wave resonator comprises a substrate, a resonation means, a first electrode adjacent to the first surface of the resonation means, a second electrode adjacent to the second surface of the resonation means, a membrane positioned between the second electrode and the substrate, a pair of etching windows, and an air gap separating at least a portion of the substrate from at least a portion of the membrane. The air gap is formed by etching a portion of the substrate through the etching windows, the resonation means resonates in response to an electric field generated between the electrodes by a voltage applied between the first and second electrodes, and the air gap insulates vibrations generated by the resonation means from the bulk acoustic wave resonator insulated from the substrate.;COPYRIGHT: (C)2007,JPO&INPIT
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