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How pinned electronically back of the back illuminated imaging device that is produced in wafer UTSOI
How pinned electronically back of the back illuminated imaging device that is produced in wafer UTSOI
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机译：如何以电子方式固定在晶圆UTSOI中生产的背照式成像设备的背面
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摘要
Method of fabricating a back-illuminated imaging device having a rear pinned is disclosed. The formed insulating layer of the first overlying the mechanical substrate. Is deposited conductive layer overlying the insulator layer of the first. Forming a first structure is formed the second insulator layer is superimposed on the conductive layer, the interface is formed between the insulating layer and the second conductive layer, conductive layer, the boundary cause band bending in proximity to the boundary surface to be pinned to the surface electrically. I to form a bubble layer of hydrogen is injected into the device wafer individually. I to form a structure of the second final insulating layer overlying the device wafer is formed. And the structure of the second and the first structure are combined, I will form a wafer that are merged. In order to expose the seed layer including a semiconductor material overlying the insulating layer of the second substantially part of the wafer bonded under the foam layer is removed.
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