The present invention relates to a band gap reference generator using CMOS, and more specifically to the first current and the second current generating unit and the operational amplifier miss of circuit configured to share a bias power matching to the (Mismatching) Troubleshooting the size of the circuit and to be smaller, the reference voltage due to temperature-dependent compensation and offset of the collector current at the same time as configured by reducing the area occupied by the resistor, which is implemented on a real chip to the design of a separate load resistance the scale of the circuit to be smaller It relates to a band gap reference generator with the problem that in case of seed to be modified simply and mask circuit moss. ; Bandgap reference generator, a reference voltage, a current generating section, a current mirror, the load resistance.
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