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METHOD FOR PREPARATION OF RUO2 THIN FILMS HAVING MESOPOROUS STRUCTURE BY ELECTROCHEMICAL DEPOSITION AND RUO2 THIN FILMS PREPARED BY THE METHOD
METHOD FOR PREPARATION OF RUO2 THIN FILMS HAVING MESOPOROUS STRUCTURE BY ELECTROCHEMICAL DEPOSITION AND RUO2 THIN FILMS PREPARED BY THE METHOD
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机译：通过电化学沉积制备具有亚微结构的RuO2薄膜的方法以及该方法制备的RuO2薄膜
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摘要
PURPOSE: A method for preparing RuO2 thin films with a mesoporous structure using electrochemical deposition is provided to increase specific surface area of RuO2 thin films to improve its electrical performance. CONSTITUTION: A method for preparing RuO2 thin films with a mesoporous structure using electrochemical deposition comprises the following steps of: dissolving ruthenium chloride powder in purified water under nitrogen atmosphere, and adding surfactant to obtain an electrolyte solution; dipping a substrate into the electrolyte solution to prepare RuO2 thin films with a mesoporous structure; and removing the surfactant using a washing solution. The surfactant includes cetyltrimethylammonium bromide. The content of the surfactant is 1-10wt%. The electrolyte solution is maintained at 10 ~ 90 C. The electrochemical deposition is performed with 0.1-5V.
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