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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Microstructure of heteroepitaxially grown RuO2 thin films on MgO by pulsed-laser deposition
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Microstructure of heteroepitaxially grown RuO2 thin films on MgO by pulsed-laser deposition

机译：脉冲激光沉积在MgO上异质外延生长的RuO2薄膜的微观结构

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Conductive ruthenium oxide (RuO2) thin films with a room-temperature resistivity of 35 mu Omega cm and a residual resistivity ratio above 5 have been heteroepitaxially grown on MgO(100) substrates by pulsed-laser deposition. The heteroepitaxial growth of RuO2 on MgO is confirmed by both the strong in-plane and the strong out-of-plane orientation of the film with respect to major axes of the substrate. The orientation relationship between the RuO2 film and the MgO substrate, deduced from both X-ray and electron diffraction, is (110)(RuO2)(100)(MgO) and [001](RuO2)[011](MgO) (and [(1) over bar 10](RuO2)[0 (1) over bar(1) over bar](MgO)). High-resolution electron microscopy reveals that the epitaxial RuO2 film contains two variants that are consistent with the X-ray diffraction measurement. [References: 13]
机译：通过脉冲激光沉积在MgO（100）衬底上异质外延生长了室温电阻率为35μΩcm且剩余电阻率大于5的导电氧化钌（RuO2）薄膜。 RuO2在MgO上的异质外延生长通过薄膜相对于基材主轴的强平面内和强平面外取向得以证实。由X射线和电子衍射得出的RuO2薄膜与MgO衬底之间的取向关系为（110）（RuO2）（100）（MgO）和[001]（RuO2） [011]（ MgO）（和[（1）在bar 10之上] [RuO2] [0（1在bar [1）之上]]（MgO））。高分辨率电子显微镜显示，外延RuO2膜包含两个与X射线衍射测量结果一致的变体。 [参考：13]

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