首页>
外国专利>
Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
展开▼
机译：Si 1-XY GE X C Y 和Si 1-Y C 的外延和多晶生长通过UHV-CVD在Si上形成Y 合金层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon 1020 cm−3, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C.
展开▼
机译：描述了一种在热壁等温UHV-CVD系统中的多个衬底上沉积硅碳和硅锗碳的单晶外延膜的方法和设备。特别地，描述了在350℃至750℃的范围内的多晶片低温生长技术，用于将碳外延地结合到具有非常陡峭且界限分明的结但没有任何相关的氧本底污染的Si和SiGe膜中。优选地，这些外延SiC和SiGeC膜是原位掺杂的p型或n型，并且存在低浓度的碳<10 20 cm -3 ，初生的p型或n型掺杂剂分布可承受850°C的炉内退火和1000°C的快速热退火温度。
展开▼
