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首页> 外文期刊>Materials Science and Engineering >Investigation of the relaxation behavior of Si_(1-x)C_x alloys during epitaxial UHV-CVD growth
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Investigation of the relaxation behavior of Si_(1-x)C_x alloys during epitaxial UHV-CVD growth

机译：Si_（1-x）C_x合金外延UHV-CVD生长过程中弛豫行为的研究

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摘要

In this work, the epitaxial growth of Si_(1-x)C_x alloys using an Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) system was studied. Si_(1-x)C_x layers were grown in a temperature range of 550-650℃ and characterized using rocking curve X-ray diffraction (XRD), atomic force microscopy (AFM) as well as Fourier transform infrared spectroscopy (FT-IR). It was found that with increasing carbon precursor flow (Methylsilane) the amount of substitutional carbon rises up to a critical value. After a maximum in substitutional carbon content is reached, a further increase of carbon fraction leads to a reduction of the strain. By FT-IR, the non-substitutional carbon was determined to form 3C-SiC precipitates already during growth. A strong correlation between the increase of Methylsilane flow and the formation of coherent precipitates even at low carbon fractions was observed. A low deposition temperature was found to promote the precipitation of 3C-SiC.
机译：在这项工作中，使用超高真空化学气相沉积（UHV-CVD）系统研究了Si_（1-x）C_x合金的外延生长。 Si_（1-x）C_x层在550-650℃的温度范围内生长，并使用摇摆曲线X射线衍射（XRD），原子力显微镜（AFM）以及傅立叶变换红外光谱（FT-IR）进行表征。发现随着碳前体流量（甲基硅烷）的增加，取代碳的量上升到临界值。在达到最大取代碳含量之后，碳分数的进一步增加导致应变降低。通过FT-IR，确定非取代碳已经在生长期间形成3C-SiC沉淀。即使在低碳含量下，也观察到甲基硅烷流量的增加与相干沉淀物形成之间的密切相关性。发现较低的沉积温度促进了3C-SiC的沉淀。

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  • 来源
    《Materials Science and Engineering》 |2008年第2008期|p.90-94|共5页
  • 作者

    I. Ostermay; T. Kammler; A. Naumann; J.W. Bartha; P. Kuecher;

  • 作者单位

    Fraunhofer Center Nanoelectronk Technologies, Koenigsbruecker Strasse 180, D-01099 Dresden, Germany;

    AMD Saxony LLC & Co. KC, Wilschdorfer Landstrasse 101, D-01109 Dresden. Germany;

    Fraunhofer Center Nanoelectronk Technologies, Koenigsbruecker Strasse 180, D-01099 Dresden, Germany;

    Semiconductor and Microsystems Technology Laboratory, Dresden Technical University, Noethnitzer Strasse 64, D-01062 Dresden, Germany;

    Fraunhofer Center Nanoelectronk Technologies, Koenigsbruecker Strasse 180, D-01099 Dresden, Germany;

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  • 正文语种 eng
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  • 关键词

    silicon carbon; strain engineering; UHV-CVD; epitaxy; CMOS;

    机译：硅碳应变工程;超高压化学汽相淀积;外延CMOS;

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