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SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function
SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function
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机译：SRAM器件结构，包括具有带高K电介质和相同功函数的栅极叠层的相同带隙晶体管
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摘要
An SRAM semiconductor device includes: at least a first and a second field effect transistor formed on a same substrate, each of the transistors including a gate stack, each gate stack including a semiconductor layer disposed on a metal layer, the metal layer being disposed on a high-k dielectric layer located over a chemical region, wherein the metal layer of the first gate stack and the metal layer of the second gate stack have approximately a same work function, and wherein each channel region has approximately a same band gap.
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