Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels

• 1. 一种提高CMOS图像传感器量子效率的光电二极管结构 [P] . 中国专利： CN108110021B . 2020.07.28
• 2. 一种提高CMOS图像传感器量子效率的光电二极管结构 [P] . 中国专利： CN107994096B . 2020.03.31
• 3. Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels [P] . 美国专利： US7285796B2 . 2007-10-23

  机译： 凸起的光电二极管传感器可提高比例像素的填充系数和量子效率

• 4. Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels [P] . 美国专利： US2006175641A1 . 2006-08-10

  机译： 凸起的光电二极管传感器可提高比例像素的填充系数和量子效率

• 5. Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels [P] . 美国专利： US2005269606A1 . 2005-12-08

  机译： 凸起的光电二极管传感器可提高比例像素的填充系数和量子效率

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