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Adhesion of tungsten nitride films to a silicon surface
Adhesion of tungsten nitride films to a silicon surface
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机译：氮化钨膜与硅表面的附着力
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摘要
A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si-NH2 is formed on the silicon surface, serving as an adhesion layer. A WNx layer is formed over the Si-NH2 layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNx layer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.
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机译：描述了一种在钨层和硅表面之间形成低电阻率连接并且钨与硅的高粘附性的方法。硅表面经过等离子体清洁，以去除自然氧化物。在硅表面上形成一层非常薄的Si-NH 2 层（一个或多个单层），用作粘附层。使用原子层沉积（ALD）工艺在Si-NH 2 层上方形成WN x 层，以用作阻挡层。通过CVD在WN x 层上形成厚的钨层。可以在钨层上方形成附加的金属层（例如，铝）。
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