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Production manner and its photodiode formation manner of the CMOS image sensor where depth of the photodiode differs according to the wavelength of light.
Production manner and its photodiode formation manner of the CMOS image sensor where depth of the photodiode differs according to the wavelength of light.
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机译：CMOS图像传感器的制造方式及其光电二极管形成方式，其中光电二极管的深度根据光的波长而不同。
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摘要
An image sensor capable of preventing the cross-talk phenomenon due to a deep penetration depth and a low absorption coefficient of red light in a photodiode region and a method for fabricating the same, wherein the photodiode for collecting incident light has different depths in accordance with the wavelength of the incident light. The photodiode for receiving red light, which has the longest wavelength, has the deepest depth, the photodiode for receiving blue light has the least depth, and the photodiode for receiving green light, which has a wavelength between the red light and the blue light has an intermediate depth.
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