首页> 外国专利> SEMICONDUCTOR OXIDATION APPARATUS, MANUFACTURING METHOD OF SURFACE EMITTING LASER ELEMENT USING IT, SURFACE EMITTING LASER ARRAY PROVIDED WITH SURFACE EMITTING LASER ELEMENT MANUFACTURED BY THE SAME, OPTICAL TRANSMITTING SYSTEM EQUIPPED WITH SURFACE EMITTING LASER ELEMENT MANUFACTURED BY THE METHOD OR SURFACE EMITTING LASER ARRAY AND IMAGE FORMING DEVICE

SEMICONDUCTOR OXIDATION APPARATUS, MANUFACTURING METHOD OF SURFACE EMITTING LASER ELEMENT USING IT, SURFACE EMITTING LASER ARRAY PROVIDED WITH SURFACE EMITTING LASER ELEMENT MANUFACTURED BY THE SAME, OPTICAL TRANSMITTING SYSTEM EQUIPPED WITH SURFACE EMITTING LASER ELEMENT MANUFACTURED BY THE METHOD OR SURFACE EMITTING LASER ARRAY AND IMAGE FORMING DEVICE

机译：半导体氧化装置，使用它的表面发射激光元件的制造方法，由相同的表面发射激光元件提供的表面发射激光阵列，由表面发射的激光发射装置，以及由表面发射激光元件制造的光学发射系统，设备

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PROBLEM TO BE SOLVED: To provide a semiconductor oxidation apparatus where a size of a non-oxidizing region in a wafer can be made uniform.;SOLUTION: A heater 105 is arranged in a heating table 103. An outer peripheral part of a semiconductor test sample 140 placed on a test sample tray 107 is heated to 365C in accordance with control from a control part 127, and an inner peripheral part of the semiconductor test sample 140 is heated to 370C. A mass flow controller 113 supplies nitrogen gas to a vaporizer 114. A liquid mass flow controller 111 supplies water held by a water tank container 109 to the vaporizer 114. The vaporizer 114 vaporizes water from the liquid mass flow controller 111 and generates steam, and generated steam is supplied to a reaction container 101 through pipings 115 and 116, a bulb 120 and an introductory pipe 108 with nitrogen gas from the mass flow controller 113 as carrier gas.;COPYRIGHT: (C)2008,JPO&INPIT

机译：解决的问题：提供一种半导体氧化装置，其晶片中非氧化区域的尺寸可以均匀。解决方案：加热器105布置在加热台103中。半导体测试的外围部分根据来自控制部127的控制，将放置在测试样品托盘107上的样品140加热至365℃，并将半导体测试样品140的内周部加热至370℃。质量流量控制器113将氮气供应至汽化器114。液体质量流量控制器111将由水箱容器109保持的水供应至汽化器114。汽化器114使来自液体质量流量控制器111的水汽化并产生蒸汽，并且产生的蒸汽通过管道115和116，球管120和引入管108供应到反应容器101中，氮气来自质量流量控制器113作为载气。版权所有：（C）2008，JPO＆INPIT

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公开/公告号JP2008218774A

专利类型
公开/公告日2008-09-18

原文格式PDF
申请/专利权人 RICOH CO LTD;
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申请/专利号JP20070055225
发明设计人 ITO AKIHIRO;SHOJI HIROYOSHI;SATO SHUNICHI;
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申请日2007-03-06
分类号H01L21/31;H01S5/183;H01L21/205;
国家 JP
入库时间 2022-08-21 20:25:42

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