首页> 外国专利> Opto-electronic semiconductor chip e.g. laser diode chip, has semiconductor body including radiation penetration surface that is covered by passivation layer, where passivation layer contains material e.g. aluminum nitride

Opto-electronic semiconductor chip e.g. laser diode chip, has semiconductor body including radiation penetration surface that is covered by passivation layer, where passivation layer contains material e.g. aluminum nitride

机译：光电半导体芯片激光二极管芯片具有包括辐射穿透表面的半导体主体，该辐射穿透表面被钝化层覆盖，其中钝化层包含例如铝，镍，锌，镍，锌，镍，铁，镍等的材料。氮化铝

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摘要

The chip has a semiconductor body (1) including a radiation penetration surface (2) that is covered by a passivation layer (3). The passivation layer contains a material e.g. aluminum nitride and diamond-like nano-composite material, and is attached to a rear side of the body. The passivation layer is provided for absorption of ultraviolet radiation and is thermally and mechanically connected with heat conducting components by using a glued connection, where the heat conducting components are made from a ceramic material.

机译：该芯片具有半导体本体（1），该半导体本体（1）包括被钝化层（3）覆盖的辐射穿透面（2）。钝化层包含例如以下材料。氮化铝和类金刚石纳米复合材料，并附着在主体的背面。钝化层被设置用于吸收紫外线，并且该钝化层通过使用胶合连接与导热部件热和机械地连接，其中导热部件由陶瓷材料制成。

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公开/公告号DE102005063106A1

专利类型
公开/公告日2007-07-05

原文格式PDF
申请/专利权人 PATENT-TREUHAND-GESELLSCHAFT FUER ELEKTRISCHE GLUEHLAMPEN MBH;
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申请/专利号DE20051063106
发明设计人 HOCKEL JENS FLORIAN;BERGHAHN DIRK;MUELLER PATRICK;
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申请日2005-12-30
分类号H01L33/00;H01L31/0232;H01L31/102;H01S5/028;H01S5/024;
国家 DE
入库时间 2022-08-21 20:29:31

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