Ultra-thin channel device with raised source and drain and solid source extension doping

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• 2. 具有由金属源极/漏极和共形再生长源极/漏极导致的单轴应变的量子阱MOSFET沟道 [P] . 中国专利： CN105428228B . 2019.06.18
• 3. Ultra-thin channel device with raised source and drain and solid source extension doping [P] . 美国专利： US2005014314A1 . 2005-01-20

  机译： 具有超薄的源极和漏极以及固态源极扩展掺杂的超薄沟道器件

• 4. Ultra-thin channel device with raised source and drain and solid source extension doping [P] . 美国专利： US6812105B1 . 2004-11-02

  机译： 具有超薄的源极和漏极以及固态源极扩展掺杂的超薄沟道器件

• 5. Solid source doping for source and drain extension doping [P] . 美国专利： US9978649B2 . 2018-05-22

  机译： 固体源极掺杂，用于源极和漏极扩展掺杂

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