OPTIMIZATION OF ULTRA-THIN BODY, FULLY- DEPLETED-SOI DEVICE, WITH RAISED SOURCE/DRAIN OR RAISED EXTENSION

机译：优化的薄体，SOI完全耗尽的设备，具有提高的源/漏或提高的扩展性

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Raised source/drain (S/D) or raised extension in fully depleted SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice, of raising the extension versus the S/D, will depend upon the maximum achievable mobility in the structure at a 60 nm physical gate length.

机译：由于非常薄的薄膜会增加电阻，因此必须使用完全耗尽的SOI（FDSOI）中升高的源极/漏极（S / D）或升高的扩展范围来提高饱和电流。我们证明了提高扩展与S / D的选择将取决于在60 nm物理栅极长度下结构中可实现的最大迁移率。

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《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.572-577|共6页
会议地点 Paris(FR);Paris(FR)
作者
J. L. (Skip) Egley; Anne Vandooren; Brian Winstead; Eric Verret; Bruce White; Bich-Yen Nguyen;
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作者单位

Advanced Product Research Development Lab, Motorola Inc. Tempe, AZ 85284;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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专利

1. Comparison of raised source/drain versus raised extension in ultra-thin body, fully-depleted-SOI, including effects of BEOL via capacitances [J] . J.L. (Skip) Egley, Anne Vandooren, Brian Winstead, Solid-State Electronics . 2004,第9期

机译：超薄全耗尽SOI中源极/漏极升高与扩展扩展的比较，包括BEOL通过电容的影响
2. A15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications [J] . Chang-Hyun Park, Myung-Hwan Oh, Hee-Sung Kang, ETRI journal . 2004,第6期

机译：A15 nm超薄体SOI CMOS器件，具有双提升的源极/漏极，适用于90 nm模拟应用
3. A 15 nm Ultra-thin Body SOI CMOS Device with Double Raised Source/Drain for 90 nm Analog Applications [J] . Chang-Hyun Park, Myung-Hwan Oh, Hee-Sung Kang, ETRI journal . 2004,第6期

机译：15纳米超薄体SOI CMOS器件，具有双提升的源极/漏极，适用于90 nm模拟应用
4. OPTIMIZATION OF ULTRA-THIN BODY, FULLY- DEPLETED-SOI DEVICE, WITH RAISED SOURCE/DRAIN OR RAISED EXTENSION [C] . J. L. (Skip) Egley, Anne Vandooren, Brian Winstead, Electrochemical Society Meeting and International Symposium on Silicon-on-Insulator Technology and Devices XI; 20030428-20030502; Paris; FR . 2003

机译：优化的薄体，SOI完全耗尽的设备，具有提高的源/漏或提高的扩展性
5. Design, fabrication, and characterization of tungsten/silicon germanium/silicon raised single source/drains for sub-100nm CMOS and sub-70nm fully self-aligned double-gated CMOS [D] . Gan, Dong 2000

机译：低于100nm CMOS和低于70nm完全自对准双栅极CMOS的钨/硅锗/硅凸起单源/漏极的设计，制造和表征
6. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021

机译：凸源/漏极（RSD）和垂直掺杂漏极（LDD）多Si薄膜晶体管
7. Floating Body DRAM with Body Raised and Source/Drain Separation [O] . Gino Giusi 2021

机译：浮体DRAM与身体凸起和源/排水分离
8. Recreation Fees: Demonstration Program Successful in Raising Revenues but Could211 Be Improved. Statement of Barry T. Hill, Associate Director, Energy, Resources, 211 and Science Issues, Resources, Community, and Economic Development Division [R] . 1999

机译：娱乐费用：示范项目在提高收入方面取得了成功，但仍有待改进。 Barry T. Hill的声明，能源，资源，211和科学问题，资源，社区和经济发展部副主任

OPTIMIZATION OF ULTRA-THIN BODY, FULLY- DEPLETED-SOI DEVICE, WITH RAISED SOURCE/DRAIN OR RAISED EXTENSION

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